Indium tin oxide contacts to gallium nitride optoelectronic devices

被引：226
|
作者：
Margalith, T [1 ]
Buchinsky, O
Cohen, DA
Abare, AC
Hansen, M
DenBaars, SP
Coldren, LA
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期
关键词：
D O I：
10.1063/1.124227
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated GaN-based light-emitting diodes using transparent indium tin oxide (ITO) p contacts. ITO-contacted devices required an additional 2 V to drive 10 mA, as compared to similar devices with metal contacts. However, ITO has lower optical absorption at 420 nm (alpha = 664 cm(-1)) than commonly used thin metal films (alpha = 3 x 10(5) cm(-1)). Uniform luminescence was observed in ITO-contacted devices, indicating effective hole injection and current spreading. (C) 1999 American Institute of Physics. [S0003-6951(99)01626-5].
引用
收藏
页码：3930 / 3932
页数：3
相关论文
共 50 条
  • [1] Modeling of gallium nitride optoelectronic devices
    Flory, CA
    Hasnain, G
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 90 - 104
  • [2] Gallium nitride multioperate optoelectronic devices
    Sidorov, VG
    Drizhuk, AG
    Sidorov, DV
    NITRIDE SEMICONDUCTORS, 1998, 482 : 1137 - 1141
  • [3] Surface modification of indium-tin-oxide anode for organic optoelectronic devices
    Zhong Z.
    Gu J.
    Sun F.
    Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2011, 31 (02): : 237 - 241
  • [4] Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices
    Simeonov, D.
    Tsai, M. Y.
    Chen, H. T.
    Weisbuch, C.
    Speck, J.
    ELECTRONICS LETTERS, 2011, 47 (09) : 556 - 558
  • [5] Phase Stability and Optoelectronic Properties of the Bixbyite Phase in the Gallium-Indium-Tin-Oxide System
    Dolgonos, Alex
    Wells, Spencer A.
    Poeppelmeier, Kenneth R.
    Mason, Thomas O.
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2015, 98 (02) : 669 - 674
  • [6] Optoelectronic Properties of Indium-assisted Gallium Nitride Nanowires
    Rizal, Umesh
    Swain, Bibhu P.
    Swain, Bhabani S.
    2015 INTERNATIONAL CONFERENCE ON MICROWAVE, OPTICAL AND COMMUNICATION ENGINEERING (ICMOCE), 2015, : 181 - 184
  • [7] Effect of Sheet Resistance of Indium Tin Oxide Films on Thermal Management in Optoelectronic Devices
    Bi, Ran
    Zheng, Chuantao
    Yu, William W.
    Wang, Dingdi
    ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (05) : 3167 - 3174
  • [8] Optoelectronic devices - Gallium nitride LED has the blues
    Lewotsky, K
    LASER FOCUS WORLD, 1996, 32 (10): : 25 - 25
  • [9] Microstructure of Ti/Al and TiN Ohmic contacts to gallium nitride
    Lab. d'Etud. de Rech. Sur Les Mat., UPRESA 6004 CNRS, ISMRA, 6 boulevard Maréchal Juin, F-14050 Caen Cedex, France
    不详
    不详
    不详
    Phys Status Solidi A, 1 (767-771):
  • [10] The microstructure of Ti/Al and TiN ohmic contacts to gallium nitride
    Ruterana, P
    Nouet, G
    Kehagias, T
    Komninou, P
    Karakostas, T
    Poisson, MAD
    Huet, F
    Morkoc, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 767 - 771
12345