Enhancement of effective carrier velocity in AlGaN/GaN MOSHFETs with Al2O3 gate oxide

被引：4

作者：

Stoklas, R. ^{[1
]}

Gazi, S. ^{[1
]}

Gregusova, D. ^{[1
]}

Novak, J. ^{[1
]}

Kordos, P. ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

D O I：

10.1002/pssc.200778484

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transport properties of Al2O3/AlGaN/GaN MOSHFETs and their unpassivated HFET counterparts are investigated. The Al2O3 gate oxide is only 4 rim thick and prepared by an oxidation of sputtered Al layer. The saturation drain current increased from 430 mA/mm for the HFET to 600 mA/mm for the MOSHFET. A significant increase of the extrinsic transconductance was observed - the peak values were 71 MS/nm for the HFET and 140 mS/mm for the MOSHFET. The transconductance increase is attributed to an enhancement of the effective carrier velocity due to the suppression of trapping states and following change of the electric field distribution below/near the gate contact. The MOSHFET devices showed significantly lower frequency dispersion of their capacitance than the HFET counterparts. All these shows an importance of thin and/or 'high-K' gate oxides for the preparation of AlGaN/GaN MOSHFETs.

引用

页码：1935 / 1937

页数：3

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