Ion beam characterization of rf-sputter deposited AlN films on Si(111)

被引：9
|
作者：
Matsunami, N. [1 ]
Venkatachalam, S. [1 ]
Tazawa, A. [2 ]
Kakiuchida, H. [2 ]
Sataka, M. [3 ]
机构：
[1] Nagoya Univ, EcoTopia Sci Inst, Div Energy Sci, Nagoya, Aichi 4648603, Japan
[2] Natl Inst Adv Ind Sci & Technol, Nagoya, Aichi 4638560, Japan
[3] Japan Atom Energy Agcy, Tokai, Ibaraki 3191195, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 08期
关键词：
AlN thin film on Si(111); crystalline quality and orientation; impurities;
D O I：
10.1016/j.nimb.2007.12.086
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Aluminum nitride (AlN) thin films have been deposited on Si(111) substrates by using reactive-rf-magnetron-sputtering at 250 degrees C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c- or a-axis orientation. The composition, film thickness, impurities and stress are considered to be factors affecting the orientation and have been analyzed by Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA) and XRD. Their effects on the film growth will be discussed. Surface morphology of the films will be also presented. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1522 / 1526
页数：5
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