Characterization of sputter deposited PbTe on Si (111) for optoelectronic applications

被引：0
|
作者：
Jdanov, A [1 ]
Dashevsky, Z [1 ]
Pelleg, J [1 ]
Shneck, R [1 ]
机构：
[1] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
来源：
PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2003年 / 744卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
IV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 - 10 mum.
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页码：271 / 275
页数：5
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