Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

被引：3
|
作者：
Andresen, SE
Sorensen, BS
Rasmussen, FB
Lindelof, PE
Sadowski, J
Guertler, CM
Bland, JAC
机构：
[1] Univ Copenhagen, Niels Bohr Inst, fAPG, Orsted Lab, DK-2100 Copenhagen O, Denmark
[2] Lund Univ, MAX Lab, S-22100 Lund, Sweden
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 06期
关键词：
D O I：
10.1063/1.1602945
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band. (C) 2003 American Institute of Physics.
引用
收藏
页码：3990 / 3994
页数：5
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