Doping Incorporation in InAs nanowires characterized by capacitance measurements

被引：37

作者：

Astromskas, Gvidas ^{[1
,2
]}

Storm, Kristian ^{[1
,2
]}

Karlstrom, Olov ^{[3
]}

Caroff, Philippe ^{[1
,2
]}

Borgstrom, Magnus ^{[1
,2
]}

Wernersson, Lars-Erik ^{[1
,2
]}

机构：

[1] Lund Univ, Dept Solid State Phys, SE-22100 Lund, Sweden

[2] Lund Univ, Nanometer Struct Consortium, SE-22100 Lund, Sweden

[3] Lund Univ, Dept Math Phys, SE-22100 Lund, Sweden

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 05期

基金：

瑞典研究理事会;

关键词：

WRAP-GATE; TRANSISTORS; DEVICES;

D O I：

10.1063/1.3475356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sn and Se doped InAs nanowires are characterized using a capacitance-voltage technique where the threshold voltages of nanowire capacitors with different diameter are determined and analyzed using an improved radial metal-insulator-semiconductor field-effect transistor model. This allows for a separation of doping in the core of the nanowire from the surface charge at the side facets of the nanowire. The data show that the doping level in the InAs nanowire can be controlled on the level between 2 X 10(18) to 1 X 10(19) cm(-3), while the surface charge density exceeds 5 X 10(12) cm(-2) and is shown to increase with higher dopant precursor molar fraction. (C) 2010 American Institute of Physics. [doi:10.1063/1.3475356]

引用

页数：5

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