Low Temperature Characteristics of Electronic Density of States in Epitaxial Graphene

被引：5

作者：

Bobenko, N. G. ^{[1
,2
]}

Egorushkin, V. E. ^{[1
]}

Melnikova, N. V. ^{[3
]}

Belosludtseva, A. A. ^{[1
,4
]}

Barkalov, L. D. ^{[4
]}

Ponomarev, A. N. ^{[1
]}

机构：

[1] RAS, Inst Strength Phys & Mat Sci, SB, Tomsk, Russia

[2] Natl Res Tomsk Polytech Univ, Tomsk, Russia

[3] Tomsk State Univ, Kuznetsov Siberian Phys Tech Inst, Tomsk, Russia

[4] Tomsk State Univ Control Syst & Radioelect, Tomsk, Russia

来源：

JOURNAL OF STRUCTURAL CHEMISTRY | 2018年 / 59卷 / 04期

关键词：

graphene; density of states; short-range order; structural defects; transport properties; DISORDERED CARBON NANOTUBES; METALS;

D O I：

10.1134/S0022476618040157

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

We propose a novel approach which considers the positions of defects in graphene structure to describe how electronic density of states and the type of graphene conductivity are affected by electron scattering by certain configurations of foreign atoms in graphene matrix. Despite the fact that there is still insufficient experimental data concerning the effect of short-range order on graphene physical properties, we assume that local disorder can play a decisive role in the low-temperature behavior of graphene's electronic properties.

引用

页码：853 / 859

页数：7

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