Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

被引：2

作者：

Amilusik, M. ^{[1
,2
]}

Sochacki, T. ^{[1
,2
]}

Lucznik, B. ^{[1
,2
]}

Fijalkowski, M. ^{[1
]}

Iwinska, M. ^{[1
]}

Weyher, J. L. ^{[1
]}

Grzanka, E. ^{[1
,2
]}

Krupczynska, P. ^{[2
]}

Khachapuridze, A. ^{[1
,2
]}

Grzegory, I. ^{[1
]}

Bockowski, M. ^{[1
,2
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] TopGaN Ltd, PL-01142 Warsaw, Poland

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES X | 2015年 / 9363卷

关键词：

HVPE; GaN; non-polar GaN; semi-polar GaN; homoepitaxy; PIEZOELECTRIC FIELDS; PLANE; NONPOLAR;

D O I：

10.1117/12.2077929

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this article homoepitaxial HVPE-GaN growth in directions other than [0001] is described. Three crystallization runs on (11-20), (10-10), (20-21), and (20-2-1) seeds were performed. In each experiment a different carrier gas was used: N-2, H-2, and a 50% mixture of N-2 and H-2. Other conditions remained constant. An influence of the growth direction and carrier gas on growth rate and properties (morphology, structural quality, and free carrier concentration determined by Raman spectroscopy) of obtained crystals was investigated and discussed in details. For all crystallographic directions a lower growth rate was determined with hydrogen used as the carrier gas. Also, the highest level of dopants was observed for crystals grown under hydrogen. A possibility to obtain highly conductive GaN layers of high quality without an intentional doping is demonstrated.

引用

页数：11

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