Spatially resolved luminescence properties of non- and semi-polar InGaN quantum wells on GaN microrods

被引：1
|
作者：
Duehn, J. [1 ]
Tessarek, C. [1 ,2 ]
Schowalter, M. [1 ]
Coenen, T. [3 ]
Gerken, B. [1 ]
Mueller-Caspari, K. [1 ]
Mehrtens, T. [1 ]
Heilmann, M. [2 ]
Christiansen, S. [2 ,4 ]
Rosenauer, A. [1 ]
Gutowski, J. [1 ]
Sebald, K. [1 ]
机构：
[1] Univ Bremen, Inst Solid State Phys, Otto Hahn Allee 1, D-28359 Bremen, Germany
[2] Max Planck Inst Sci Light, Gunther Scharowsky Str 1, D-91058 Erlangen, Germany
[3] DELMIC BV, Kanaalweg 4, NL-2628 EB Delft, Netherlands
[4] Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2018年 / 51卷 / 35期
关键词：
InGaN; microrod; luminescence; non-polar; semi-polar; quantum well; TRANSMISSION ELECTRON-MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; NANORODS; NONPOLAR; HETEROSTRUCTURES; EMISSION; EPITAXY; LASERS;
D O I：
10.1088/1361-6463/aad4e6
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spatially resolved emission properties of InGaN/GaN quantum wells on the facets of microrods are analyzed by means of photoluminescence and cathodoluminescence measurements. We observe strongly localized emissions of the non- and semi-polar InGaN quantum wells from the top part of the microrods, suggesting optical emitters of high efficiency. The quantum wells are characterized by transmission electron microscopy measurements with respect to their indium composition and thickness. Those wells oriented in non- and semi-polar directions possess high In concentrations as well as low internal polarization fields which makes these directions excellent candidates for InGaN quantum well emitters. These investigations show that the applied microrod growth concept is an effective method to realize high quality InGaN quantum wells on GaN facets oriented in non- and semi-polar directions which makes optoelectronic emitters in the green gap region feasible.
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页数：8
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