Enhancement of photoluminescence efficiency from semi-polar InGaN/GaN multiple quantum wells with silver metal

被引：2
|
作者：
Lee, Kyoung Su
Lee, Dong Uk
Kim, Eun Kyu [1 ]
机构：
[1] Hanyang Univ, Quantum Funct Res Lab, Seoul 133791, South Korea
来源：
JOURNAL OF LUMINESCENCE | 2015年 / 162卷
基金：
新加坡国家研究基金会;
关键词：
Semi-polar GaN; InGaN/GaN light emitting diode; Multi-quantum wells; Surface plasmon polariton; Localized surface plasmon; LIGHT-EMITTING DIODE; SURFACE-PLASMON; PLANE GAN; NANOPARTICLES; EMITTERS;
D O I：
10.1016/j.jlumin.2015.02.012
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have studied the effect of surface plasmon polariton (SPP) and localized surface plasmon (LSP) on the emission of semi-polar InGaN/GaN light emitting diode (LED) with multi-quantum wells structure. From the photoluminescence (PL) measurement at room temperature, spectrally-integrated enhancements of semi-polar SPP LEDs with 15 and 40-nm-thick Ag films were 1.7 and 2.9, respectively. The absorbance peak of Ag nanoparticles was red-shifted as diameter of Ag nanoparticles increases. However, the absorbance peak of Au nanoparticles was not related with their diameters. Spectrally-integrated enhancement of semi-polar LSP LED with 250-nm-diameter Ag nanoparticles was shown to 1.3. These results showed that the blue emission of semi-polar InGaN/GaN LED can be improved by SPP and LSP. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：115 / 118
页数：4
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