Ni-Silicide Schottky Barrier Micropyramidal Photodetector Array

被引:1
|
作者
Bidney, Grant W. [1 ,2 ]
Jin, Boya [1 ]
Deguzman, Lou [1 ]
Duran, Joshua M. [2 ]
Ariyawansa, Gamini [2 ]
Anisimov, Igor [2 ]
Limberopoulos, Nicholaos, I [2 ]
Urbas, Augustine M. [3 ]
Allen, Kenneth W. [4 ]
Gunapala, Sarath D. [5 ]
Astratov, Vasily N. [1 ,2 ]
机构
[1] Univ North Carolina Charlotte, Ctr Optoelect & Opt Commun, Dept Phys & Opt Sci, Charlotte, NC 28223 USA
[2] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA
[3] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[4] Georgia Inst Technol, Georgia Tech Res Inst, Adv Concepts Lab, Atlanta, GA 30332 USA
[5] CALTECH, Jet Prop Lab, 4800 Oak Grove Dr, Pasadena, CA 91030 USA
基金
美国国家航空航天局;
关键词
infrared photodetectors; Schottky barrier photodetector; light concentrators; PYRAMIDS; TMAH;
D O I
10.1109/NAECON49338.2021.9696408
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
In attempt to increase the quantum yield of metal/silicide Schottky barrier photodetectors, in this work we fabricated and tested Si micropyramidal arrays which are capable to resonantly trap photons in the photodetector areas. To simplify testing, Ni/silicide Schottky barrier photodetectors were formed on the entire 1.5 x 1.5 mm areas occupied by the micropyramidal arrays. Preliminary testing results revealed potentially stronger photoresponse of micropyramids with narrow tops, but further studies are required to compare the performance of such novel photodetector arrays with different geometrical parameters of micropyramids.
引用
收藏
页码:116 / 118
页数:3
相关论文
共 50 条
  • [21] SCHOTTKY-BARRIER, ELECTRONIC STATES AND MICROSTRUCTURE AT NI SILICIDE-SILICON INTERFACES
    HO, PS
    LIEHR, M
    SCHMID, PE
    LEGOUES, FK
    YANG, ES
    EVANS, HL
    WU, X
    SURFACE SCIENCE, 1986, 168 (1-3) : 184 - 192
  • [22] Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
    Lauwers, A
    Besser, P
    Gutt, T
    Satta, A
    de Potter, M
    Lindsay, R
    Roelandts, N
    Loosen, F
    Jin, S
    Bender, H
    Stucchi, M
    Vrancken, C
    Deweerdt, B
    Maex, K
    MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) : 103 - 116
  • [23] Composition measurement of the Ni-silicide transient phase by atom probe tomography
    Hoummada, K.
    Blum, I.
    Mangelinck, D.
    Portavoce, A.
    APPLIED PHYSICS LETTERS, 2010, 96 (26)
  • [24] Lamellar-structured Ni-silicide film formed by eutectic solidification
    Kim, Jinbum
    Jung, Younheum
    Lee, Sungho
    Hong, Seongpyo
    Choi, Seongheum
    Kim, Jinyong
    Park, Taejin
    Lee, Eunha
    YeonWon, Jung
    Lee, Hyung-Ik
    Lee, Yun Jae
    Kim, Bosung
    Kim, Joong Jung
    Kim, Yihwan
    Hwang, Kihyun
    Yang, Cheol-Woong
    Kim, Hyoungsub
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 771 : 124 - 130
  • [25] Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires
    Hsu, Hsun-Feng
    Chen, Chun-An
    Liu, Shang-Wu
    Tang, Chun-Kai
    NANOSCALE RESEARCH LETTERS, 2017, 12
  • [26] SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDE
    OHDOMARI, I
    TU, KN
    DHEURLE, FM
    KUAN, TS
    PETERSSON, S
    APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1028 - 1030
  • [27] Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications
    Zhu, Shiyang
    Yu, M. B.
    Lo, G. Q.
    Kwong, D. L.
    APPLIED PHYSICS LETTERS, 2008, 92 (08)
  • [28] BARRIER HEIGHT OF TITANIUM SILICIDE SCHOTTKY-BARRIER DIODES
    KIKUCHI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L894 - L895
  • [29] Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation
    Loh, Wei-Yip
    Etienne, Hasnaa
    Coss, Brian
    Ok, Injo
    Turnbaugh, Dean
    Spiegel, Yohann
    Torregrosa, Frank
    Banti, Joel
    Roux, Laurent
    Hung, Pui-Yee
    Oh, Jungwoo
    Sassman, Barry
    Radar, Kelly
    Majhi, Prashant
    Tseng, Hsing-Huang
    Jammy, Rajarao
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (11) : 1140 - 1142
  • [30] Thermal stability and electrical properties of Ni-silicide on C-incorporated Si
    Nakatsuka, O
    Okubo, K
    Sakai, A
    Ogawa, M
    Zaima, S
    Murota, J
    Yasuda, Y
    ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), 2004, : 293 - 298