Thermal stability and electrical properties of Ni-silicide on C-incorporated Si

被引：0

作者：

Nakatsuka, O ^{[1
]}

Okubo, K ^{[1
]}

Sakai, A ^{[1
]}

Ogawa, M ^{[1
]}

Zaima, S ^{[1
]}

Murota, J ^{[1
]}

Yasuda, Y ^{[1
]}

机构：

[1] Nagoya Univ, EcoTopia Sci Inst, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004) | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal stability and electrical properties of Ni-silicide on C-implanted Si were investigated. C implantation at a dose below 3 x 10(15) cm(-2) into Si effectively suppressed NiSi agglomeration, leading to the prevention of sheet resistance increase of NiSi. B diffusion from Ni silicide layer into Si substrate is effectively suppressed during silicidation and higher concentration of B at the NiSi/Si interface leads to the reduction of contact resistance. C implantation does not significantly influence the leakage current of p(+)/n junctions below NiSi/p(+)-Si contacts at room temperature.

引用

页码：293 / 298

页数：6

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