Characteristics of indium oxide films prepared by DC magnetron sputtering.

Highly conductive (In2O3) thin films magnetron sputtering using pure indium oxide targets. Sputtering was done in a pure Argon (Ar) atmosphere with a residual pressure of less than 4x10(-5) Torr. The substrate temperature was varied during the sputtering process from room temperature to 250 degrees C. Some of the In2O3 samples were given a post-deposition heat treatment while still in vacuum. The indium oxide films were deposited on borosilicate glass plates 0.13 divided by 0.17 mn thick and on optical slide glasses 1 mm thick. The resultants films were characterized for their optical, electrical and mechanical properties. Results show that films with resistivity as low as 2.7x10(-3) Omega cm, and transmittance as high as 92% in the visible range (400 divided by 650 nm) can be obtained by gaining a complete control on the process parameters. A variance in the electrical, mechanical and optical properties of the In2O3 films was found in layers made on borosilicate glass substrates.