A High Gain K-band LNA in GaAs 0.1-μm pHEMT for Radio Astronomy Application

被引：0
|
作者：
Chen, Bo-Yu [1 ]
Chiong, Chau-Ching [2 ]
Wang, Huei [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei, Taiwan
[2] Acad Sinica, Inst Astron & Astrophys, Taipei, Taiwan
来源：
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2014年
关键词：
K-band; HEMT; low-noise amplifier; LOW-NOISE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a K-band MMIC low noise amplifier (LNA) using 0.1-pm GaAs pseudomorphic high electron mobility transistor (pHEMT). The K-band LNA shows small signal gain of 29 dB from 18.5 to 30 GHz with dc power consumption 27 mW and demonstrates a measured noise figure of 2.1 dB from 20 to 33 GHz. The figure-of-merit (FOM) is 544 (GHz/mW).
引用
收藏
页码：226 / 228
页数：3
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