A K-Band High-Gain LNA in 0.13-μm RF CMOS

被引：0

作者：

Cao, Zhiyuan ^{[1
]}

He, Jin ^{[1
]}

Peng, Yao ^{[1
]}

Hou, Haomin ^{[1
]}

Wang, Hao ^{[1
]}

Chang, Sheng ^{[1
]}

Huang, Qijun ^{[1
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China

来源：

2019 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT2019) | 2019年

关键词：

cascode; high gain; K-band; LNA; RF CMOS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a K-band low-noise amplifier (LNA) for automotive radar applications. The LNA features high gain and low noise using a 3-stage cascode topology, which has been designed in a 0.13-mu m RF CMOS. According to the measurement results, the maximum gain is 31.2 dB at 24 GHz and the -3-dB bandwidth has 1.7 GHz from 23.8 to 25.5 GHz. The NF achieves 4.9 dB at 24.5 GHz. The input and output return losses S-11 and S-22 at 24 GHz are -13.5 dB and -10.5 dB, respectively. The total power consumption is 22.3 mW at a supply of 1.5 V. The chip occupies a whole area of 0.93x0.57 mm(2).

引用

页数：3

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