150 GHz GaAs Amplifiers in a Commercial 0.1-μm GaAs PHEMT Process

被引：0
|
作者：
Bessemoulin, Alex [1 ]
Rodriguez, Melissa C. [1 ]
Mahon, Simon J. [1 ]
Parker, Anthony E. [2 ]
Heimlich, Michael C. [2 ]
机构：
[1] Macom Sydney Design Ctr, 157 Walker St, Sydney, NSW 2060, Australia
[2] Macquarie Univ, Dept Engn, N Ryde, NSW 2109, Australia
来源：
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年
关键词：
millimetre-wave; HEMT; FET modelling; ETSI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
150 GHz amplifiers fabricated on a commercial GaAs process with an fT of 135 GHz are presented. The core design achieves a gain of 10 dB or more from 105 to 150 GHz and the balanced variant has a bandwidth of 100 to 150 GHz and output power above 8 dBm at 140 GHz. Significantly, this coplanar design was carried out with a model extracted from biased S-parameters up to only 50 GHz taken on a microstrip device with different gate width. The measured S-parameters and output power of the amplifiers agree remarkably well with that predicted by the model.
引用
收藏
页码：77 / 80
页数：4
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