InAs/GaAs quantum-dot saturable absorber for a diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm

被引：29
|
作者：
Su, KW [1 ]
Lai, HC [1 ]
Li, A [1 ]
Chen, YF [1 ]
Huang, KE [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan
来源：
OPTICS LETTERS | 2005年 / 30卷 / 12期
关键词：
D O I：
10.1364/OL.30.001482
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report that lnAs/GaAs quantum dots were developed to be saturable absorbers as well as output couplers in diode-pumped passively mode-locked Nd:YVO4 lasers at 1342 nm. With an incident pump power of 12.6 W, an average output power of 0.85 W with a mode-locked pulse width of 26 ps at a repetition rate of 152 MHz was obtained. (c) 2005 Optical Society of America
引用
收藏
页码：1482 / 1484
页数：3
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