Diode-pumped passively Q-switched mode-locked Nd:YLF laser with uncoated GaAs saturable absorber

被引:17
|
作者
Pan, Shudi [1 ]
Xue, Lin
Fan, Xiouwei
Huang, Haitao
He, Jingliang
机构
[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
[2] Shandong Univ, Natl Lab Crystal Mat, Jinan 250100, Peoples R China
[3] Shandong Univ, Inst Crystal Mat, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
diode-pumped; Nd : YLF solid-state laser; mode-locking; passively Q-switched; GaAs wafer;
D O I
10.1016/j.optcom.2006.10.082
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have demonstrated passively Q-switched mode-locked all-solid-state Nd:YLF laser with an uncoated GaAs wafer as saturable absorber and output mirror simultaneously. Q-switched mode-locking pulses laser with about 100% modulation depth were obtained. The average output power is 890 mW at the incident pump power of 5.76 W, corresponding to an optical slop efficiency of 20%. The temporal duration of mode-locked pulses was about 21 ps. At the Q-switched repetition rate of 30 kHz, the energy and peak power of a single pulse near the maximum of the Q-switched envelope was estimated to be about 1.6 mu J and 76 kW. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:178 / 181
页数:4
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