Diode-pumped passively Q-switched Nd:GGG crystal with GaAs saturable absorber

被引：23
|
作者：
Qin, L. J. [1 ]
Tang, D. Y. [2 ]
Xie, G. Q. [2 ]
Luo, H. [2 ]
Dong, C. M. [3 ]
Jia, Z. T. [3 ]
Tao, X. T. [3 ]
机构：
[1] Yantai Univ, Sch Environm & Mat Engn, Yantai 264005, Peoples R China
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[3] Shandong Univ, Natl Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
LASER PHYSICS | 2008年 / 18卷 / 06期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1134/S1054660X08060030
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have experimentally studied the passive Q-switching performance of a diode-pumped Nd-doped gadolinium gallium garnet (Nd:GGG) laser with a GaAs saturable absorber. Stable Q-switched pulses as short as 9 ns with a repetition rate of 196.1 kHz have been obtained with an appropriately coated GaAs wafer used as the output coupler. At 12.44 W of the absorbed pump power, an average output power of 1.03 W has been obtained and the corresponding pulse energy and peak power are 5.25 mu J and 0.58 kW, respectively.
引用
收藏
页码：719 / 721
页数：3
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