Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films

被引：20
|
作者：
Lin, Chih-Yang [1 ,2 ]
Lin, Chun-Chieh [1 ,2 ]
Huang, Chun-Hsing [1 ,2 ]
Lin, Chen-Hsi [3 ]
Tseng, Tseung-Yuen [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Winbond Elect Corp, Hsinchu 300, Taiwan
来源：
SURFACE & COATINGS TECHNOLOGY | 2007年 / 202卷 / 4-7期
关键词：
sol-gel; SrZrO3; nonvolatile memory; resistive switching;
D O I：
10.1016/j.surfcoat.2007.07.052
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码：1319 / 1322
页数：4
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