Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

被引：11
|
作者：
Li, M. X. [1 ]
Miao, J. [1 ]
Wu, S. Z. [1 ]
Liu, Q. L. [1 ]
Jiang, Y. [1 ]
Yang, H. [2 ]
Qiao, L. J. [3 ]
机构：
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
[2] Soochow Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Thin Films, Suzhou 215006, Peoples R China
[3] Univ Sci & Technol Beijing, Minist Educ, Key Lab Environm Fracture, Ctr Corros & Protect, Beijing 100083, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 548卷
关键词：
Resistive switching; SrZrO3; Copper oxide; Conduction mechanism;
D O I：
10.1016/j.jallcom.2012.08.135
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Resistance random access memory of the Pt/Cu/Nb-SrZrO3/Ag/Pt structure was firstly investigated in this work. A bistable resistive switching characteristic was achieved by current-voltage measurements at room temperature. The Cu modulation layer acting as acceptors generates oxygen vacancies in SZO layer, and modify the resistive switching properties of the memory. The dominant conduction mechanism of the high resistance state (HRS) is the space-charge-limited current theory, while the low resistance state (LRS) follows the Ohmic conduction behavior. The observed resistive switching characteristics could be ascribed to the forming of conducting filaments in the Nb-doped SrZrO3 matrix during HRS/LRS. The Pt/Cu/Nb-SrZrO3/Ag/Pt structure exhibits lower operation voltage, lower compliance current, and long retention behavior, which shows a high potential in the generation nonvolatile memory application. (C) 2012 Elsevier B.V. All rights reserved.
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页码：1 / 6
页数：6
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