200 GHz InP/GaAsxSb1-x/InP double heterojunction bipolar transistors

被引：0
|
作者：
Bolognesi, CR [1 ]
Dvorak, MW [1 ]
Pitts, O [1 ]
Watkins, SP [1 ]
机构：
[1] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada
来源：
GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000 | 2000年
关键词：
D O I：
10.1109/GAAS.2000.906329
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication and characterization of abrupt junction InP/GaAsSb/InP DHBTs with a current gain cutoff frequency f(T) and a maximum oscillation frequency f(MAX) above 200 GHz with a breakdown voltage BVCEO > 6 V. This level of performance was reached by thinning the base layer to 200 Angstrom and increasing the C- doping level to similar to 10(20) /cm(3) while using a 2000 Angstrom thick InP collector layer.
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页码：233 / 236
页数：4
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