Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon

被引：24
|
作者：
Kanomata, K. [1 ,2 ]
Tokoro, K. [1 ]
Imai, T. [1 ]
Pansila, P. [1 ]
Miura, M. [1 ]
Ahmmad, B. [1 ]
Kubota, S. [1 ]
Hirahara, K. [1 ]
Hirose, F. [1 ]
机构：
[1] Yamagata Univ, Grad Sch Sci & Engn, 4-3-16 Jonan, Yonezawa, Yamagata 9928510, Japan
[2] Japan Soc Promot Sci, Chiyoda Ku, 5-3-1 Kojimachi, Tokyo 1020083, Japan
来源：
APPLIED SURFACE SCIENCE | 2016年 / 387卷
关键词：
ALD; TEMAZ; Plasma-excited humidified argon; MIR-IRAS; THIN-FILMS; GROWTH-KINETICS; OZONE; TRIS(DIMETHYLAMINO)SILANE; SI(100); SIO2; CHEMISTRY; HFO2; ALD;
D O I：
10.1016/j.apsusc.2016.06.122
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Room-temperature atomic layer deposition (ALD) of ZrO2 is developed with tetrakis(ethylmethylamino)zirconium (TEMAZ) and a plasma-excited humidified argon. A growth per cycle of 0.17 nm/cycle at room temperature is confirmed, and the TEMAZ adsorption and its oxidization on ZrO2 are characterized by IR absorption spectroscopy with a multiple internal reflection mode. TEMAZ is saturated on a ZrO2 surface with exposures exceeding similar to 2.0 x 10(5) Langmuir (1 Langmuir =1.0 x 10(-6) Torr s) at room temperature, and the plasma-excited humidified argon is effective in oxidizing the TEMAZ-adsorbed ZrO2 surface. The IR absorption spectroscopy suggests that Zr-OH works as an adsorption site for TEMAZ. The reaction mechanism of room-temperature ZrO2 ALD is discussed in this paper. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：497 / 502
页数：6
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