Understanding and Modeling AC BTI

被引：82

作者：

Reisinger, Hans ^{[1
]}

Grasser, Tibor ^{[2
]}

Ermisch, Karsten ^{[1
]}

Nielen, Heiko ^{[1
]}

Gustin, Wolfgang ^{[1
]}

Schluender, Christian ^{[1
]}

机构：

[1] Infineon Technol, Campeon 1-12, D-85579 Neubiberg, Germany

[2] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

来源：

2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2011年

关键词：

AC-stress; NBTI; recovery; BIAS TEMPERATURE INSTABILITY; DEGRADATION; NBTI;

D O I：

10.1109/IRPS.2011.5784542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a model for AC NBTI which is based on capture and emission of charges in and out of oxide border traps. Capture and emission time constants of these traps are widely distributed from <mu s to >10(5)s and have been experimentally determined. The model gives a good quantitative understanding of experimental data from alternating stress / recovery sequences. It also provides a physical understanding of all the special features seen in AC NBTI independently of technology parameters.

引用

页数：8

共 50 条

[11] Surface-Potential-Based Compact Modeling of BTI
Esqueda, Ivan Sanchez
Barnaby, Hugh J.
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2016,
[12] Compact Modeling of Statistical BTI under Trapping/Detrapping
Velamala, Jyothi Bhaskarr
Sutaria, Ketul B.
Shimizu, Hirofumi
Awano, Hiromitsu
Sato, Takashi
Wirth, Gilson
Cao, Yu
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) : 3645 - 3654
[13] Modeling and Assessing a Practice-Oriented Curriculum for BTI
Liu Mingxu
PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON GLOBALIZATION: CHALLENGES FOR TRANSLATORS AND INTERPRETERS, 2014, : 274 - 279
[14] Review: Advances in BTI Modeling for the Design of Reliable ICs
Campos-Cruz, Alejandro
Tlelo-Cuautle, Esteban
Espinosa-Flores-Verdad, Guillermo
2016 13TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE), 2016,
[15] Modeling the Interdependences Between Voltage Fluctuation and BTI Aging
Salamin, Sami
van Santen, Victor M.
Amrouch, Hussam
Parihar, Narendra
Mahapatra, Souvik
Henkel, Joerg
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 27 (07) : 1652 - 1665
[16] Weighted Time Lag Plot Defect Parameter Extraction and GPU-based BTI Modeling for BTI Variability
van Santen, Victor M.
Diaz-Fortuny, Javier
Amrouch, Hussam
Martin-Martinez, Javier
Rodriguez, Rosana
Castro-Lopez, Rafael
Roca, Elisenda
Fernandez, Francisco V.
Henkel, Joerg
Nafria, Montserrat
2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,
[17] Comphy - A compact-physics framework for unified modeling of BTI
Rzepa, G.
Franco, J.
O'Sullivan, B.
Subirats, A.
Simicic, M.
Hellings, G.
Weckx, P.
Jech, M.
Knobloch, T.
Waltl, M.
Roussel, P. J.
Linten, D.
Kaczer, B.
Grasser, T.
MICROELECTRONICS RELIABILITY, 2018, 85 : 49 - 65
[18] Defect-based compact modeling for RTN and BTI variability
Weckx, P.
Simicic, M.
Nomoto, K.
Ono, M.
Parvais, B.
Kaczer, B.
Raghavan, P.
Linten, D.
Sawada, K.
Ammo, H.
Yamakawa, S.
Spessot, A.
Verkest, D.
Mocuta, Anda
2017 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2017,
[19] Understanding Timing Impact of BTI/RTN with Massively Threaded Atomistic Transient Simulations
Rodopoulos, Dimitrios
Stamoulis, Dimitrios
Lyras, Grigorios
Soudris, Dimitrios
Catthoor, Francky
2014 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY (ICICDT), 2014,
[20] Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures
Michl, J.
Grill, A.
Claes, D.
Rzepa, G.
Kaczer, B.
Linten, D.
Radu, I
Grasser, T.
Waltl, M.
2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,

← 1 2 3 4 5 →