Understanding and Modeling AC BTI

被引：82

作者：

Reisinger, Hans ^{[1
]}

Grasser, Tibor ^{[2
]}

Ermisch, Karsten ^{[1
]}

Nielen, Heiko ^{[1
]}

Gustin, Wolfgang ^{[1
]}

Schluender, Christian ^{[1
]}

机构：

[1] Infineon Technol, Campeon 1-12, D-85579 Neubiberg, Germany

[2] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

来源：

2011 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2011年

关键词：

AC-stress; NBTI; recovery; BIAS TEMPERATURE INSTABILITY; DEGRADATION; NBTI;

D O I：

10.1109/IRPS.2011.5784542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a model for AC NBTI which is based on capture and emission of charges in and out of oxide border traps. Capture and emission time constants of these traps are widely distributed from <mu s to >10(5)s and have been experimentally determined. The model gives a good quantitative understanding of experimental data from alternating stress / recovery sequences. It also provides a physical understanding of all the special features seen in AC NBTI independently of technology parameters.

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页数：8

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