p-shell Rabi-flopping and single photon emission in an InGaAs/GaAs quantum dot

被引:2
|
作者
Ester, P. [1 ]
Lackmann, L. [1 ]
Huebner, M. C. [1 ]
de Vasconcellos, S. Michaelis [1 ]
Zrenner, A. [1 ]
Bichler, M. [2 ]
机构
[1] Univ Gesamthsch Paderborn, D-33098 Paderborn, Germany
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
来源
关键词
antibunching; single photon emission; Rabi oscillation; coherent manipulation;
D O I
10.1016/j.physe.2007.09.129
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Very clean single photon emission from a single InGaAs/GaAs quantum dot is demonstrated by the use of a coherent optical state preparation. We present a concept for single photon emission, which uses p-shell Rabi-flopping followed by a sequence of relaxation and recombination. The proof of the (clean) single photon emission is performed by photon correlation measurements. (c) 2007 Published by Elsevier B.V.
引用
收藏
页码:2004 / 2006
页数:3
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