Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

被引：0

作者：

Mohamed Benyoucef

Verena Zuerbig

Johann Peter Reithmaier

Tim Kroh

Andreas W Schell

Thomas Aichele

Oliver Benson

机构：

[1] CINSaT,Institute of Nanostructure Technologies and Analytics (INA)

[2] University of Kassel,undefined

[3] Nano-Optik,undefined

[4] Humboldt-Universität zu Berlin,undefined

来源：

Nanoscale Research Letters | / 7卷

关键词：

III-V semiconductors; Quantum dots; Droplet epitaxy; Single-photon emission; Radiative lifetime; 87.57.uh; 78.67.Hc; 78.55.-m; 42.50.-p;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.

引用

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