Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature

被引：0
|
作者：
Mohamed Benyoucef
Verena Zuerbig
Johann Peter Reithmaier
Tim Kroh
Andreas W Schell
Thomas Aichele
Oliver Benson
机构：
[1] CINSaT,Institute of Nanostructure Technologies and Analytics (INA)
[2] University of Kassel,undefined
[3] Nano-Optik,undefined
[4] Humboldt-Universität zu Berlin,undefined
来源：
Nanoscale Research Letters | / 7卷
关键词：
III-V semiconductors; Quantum dots; Droplet epitaxy; Single-photon emission; Radiative lifetime; 87.57.uh; 78.67.Hc; 78.55.-m; 42.50.-p;
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摘要：
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence properties of the emitted photons are investigated by measuring the first-order field correlation function.
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