Numerical simulation for DC Schottky gate leakage current in AlGaN/GaN HEMTs

被引：0
|
作者：
Rodriguez, R. [1 ]
Gonzalez, B. [1 ]
Garcia, J. [1 ]
Nunez, A. [1 ]
Toulon, G. [2 ]
Morancho, F. [3 ]
机构：
[1] ULPGC, IUMA, Campus Univ Tafira S-N, E-35017 Las Palmas De Gc, Spain
[2] Exagan, 51 Rue Innovat, F-31670 Labege, France
[3] Univ Toulouse, LAAS, CNRS, UPS, F-31400 Toulouse, France
来源：
PROCEEDINGS OF THE 2018 12TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) | 2018年
关键词：
TCAD; AlGaN/GaN HEMT on Si; trapping effects; Schottky gate; GAN; MOBILITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Different causes of the gate leakage origin in A1GaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed.
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页数：4
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