Correlation between microstructure, electronic properties and flicker noise in organic thin film transistors

被引:78
|
作者
Jurchescu, Oana D. [1 ,2 ,3 ]
Hamadani, Behrang H. [1 ]
Xiong, Hao D. [1 ]
Park, Sungkyu K. [2 ,3 ]
Subramanian, Sankar [4 ]
Zimmerman, Neil M. [5 ]
Anthony, John E. [4 ]
Jackson, Thomas N. [2 ,3 ]
Gundlach, David J. [1 ]
机构
[1] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA
[2] Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, University Pk, PA 16802 USA
[3] Penn State Univ, Dept Elect Engn, Mat Res Inst, University Pk, PA 16802 USA
[4] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
[5] NIST, Atom Phys Div, Gaithersburg, MD 20899 USA
关键词
D O I
10.1063/1.2903508
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on observations of a correlation between the microstructure of organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in solution-processed thin film transistors by chemical modification of the source-drain contacts. This leads to improved device performance and gives a unique thin film microstructure for fundamental studies concerning the effect of structural order on the charge transport. We demonstrate that the 1/f flicker noise is sensitive to organic semiconductor thin film microstructure changes in the transistor channel. (C) 2008 American Institute of Physics.
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页数:3
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