Scaling limits of organic thin film transistors

被引：43

作者：

Hoppe, A. ^{[2
]}

Knipp, D. ^{[1
]}

Gburek, B. ^{[2
]}

Benor, A. ^{[1
]}

Marinkovic, M. ^{[1
]}

Wagner, V. ^{[2
]}

机构：

[1] Jacobs Univ Bremen, Elect Devices & Nanophoton Lab, D-28759 Bremen, Germany

[2] Jacobs Univ Bremen, Nano & Mol Elect Lab, D-28759 Bremen, Germany

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 04期

关键词：

Thin film transistors; Scaling behavior; Switching speed; FIELD-EFFECT TRANSISTORS; PENTACENE; DEVICES;

D O I：

10.1016/j.orgel.2010.01.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The scaling behavior and the influence of the device geometry on the switching speed of organic thin film transistors were investigated. Thiophene transistors were characterized and the influence of contact effects and overlap capacitance was studied. Fundamental scaling limits of the switching frequencies were derived. The maximum transfer frequency is limited by the device design and the specific contact resistance between the drain/source electrode and the organic semiconductor. Finally, strategies will be presented how to realize organic transistors operating at frequencies of up to 100 MHz. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：626 / 631

页数：6

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