Ohmic contact formation mechanism of the PdGe-based system on n-type GaAs

被引：0
|
作者：
Lim, JW [1 ]
Mun, JK [1 ]
Lee, JJ [1 ]
机构：
[1] Elect & Telecommun Res Inst, Cpds Semicond Res Div, Taejon 305350, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1999年 / 34卷 / 03期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the ohmic contact formation mechanism for a low contact resistivity PdGe-based system on n-GaAs annealed in the temperature range of 300 similar to 450 degrees C. The specific contact resisivity of the Pd/Ge/Au/Pd/Au ohmic contact was 2.2x10(-6) Omega cm(2) after annealing at 400 degrees C, which was lower than that of the PdGe-based ohmic contact formed using the rapid thermal annealing method. X-ray diffraction, cross-sectional scanning electron microscopy, and Anger electron spectroscopy were utilized in this study. It was found that the formation of a AuGa compound was responsible for the observed low contact resistivity. The contacts were thermally stable after isothermal annealing at 400 degrees C for 5 h.
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页码：275 / 279
页数：5
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