INTERFACIAL MICROSTRUCTURE OF NIINW OHMIC CONTACT TO N-TYPE GAAS

被引：0
|
作者：
SHIH, YC [1 ]
MURAKAMI, M [1 ]
WILKIE, EL [1 ]
PRICE, WH [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：S25 / S25
页数：1
相关论文
共 50 条
  • [1] HIGHLY STABLE SPUTTERED NIINW REFRACTORY OHMIC CONTACT TO N-TYPE GAAS
    HUGON, MC
    AGIUS, B
    VARNIERE, F
    FROMENT, M
    PILLIER, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (08) : 3570 - 3577
  • [2] GE(AS)MOW AND NIINW N-TYPE REFRACTORY OHMIC CONTACTS ON GAAS - A COMPARISON
    DUBONCHEVALLIER, C
    GLAS, F
    HENOC, P
    HUGON, MC
    AGIUS, B
    BLANCONNIER, P
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 245 - 250
  • [3] EFFECTS OF INTERFACIAL MICROSTRUCTURE ON UNIFORMITY AND THERMAL-STABILITY OF AUNIGE OHMIC CONTACT TO N-TYPE GAAS
    SHIH, YC
    MURAKAMI, M
    WILKIE, EL
    CALLEGARI, AC
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 582 - 590
  • [4] A NONALLOYED OHMIC CONTACT FORMATION ON N-TYPE GAAS
    DUTTA, R
    LAHAV, A
    ROBBINS, M
    LAMBRECHT, VG
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) : 3136 - 3140
  • [5] THERMALLY STABLE OHMIC CONTACTS TO N-TYPE GAAS .7. ADDITION OF GE OR SI TO NIINW OHMIC CONTACTS
    MURAKAMI, M
    PRICE, WH
    NORCOTT, M
    HALLALI, PE
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) : 2468 - 2474
  • [6] MICROSTRUCTURE STUDIES OF AUNIGE OHMIC CONTACTS TO N-TYPE GAAS
    MURAKAMI, M
    CHILDS, KD
    BAKER, JM
    CALLEGARI, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 903 - 911
  • [7] TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE MICROSTRUCTURE OF AUNIGE OHMIC CONTACT TO N-TYPE GAAS
    SHIH, YC
    WILKIE, EL
    MURAKAMI, M
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1485 - 1486
  • [8] Evidence for the formation of n(+)-GaAs layer in Pd/Ge ohmic contact to n-type GaAs
    Lee, JL
    Kim, YT
    Kwak, JS
    Baik, HK
    Uedono, A
    Tanigawa, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) : 5460 - 5464
  • [9] OHMIC CONTACTS TO N-TYPE GAAS
    BOUDVILLE, WJ
    MCGILL, TC
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1192 - 1196
  • [10] ION-BEAM MIXING FOR OHMIC CONTACT FORMATION TO N-TYPE GAAS
    JIE, Z
    THOMPSON, DA
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (03) : 249 - 254
12345