Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

被引:15
|
作者
Simon, John [1 ]
Jena, Debdeep [1 ]
机构
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 05期
关键词
D O I
10.1002/pssa.200778745
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The performance of III-V nitride heterostructure bipolar transistors has been limited by highly resistive p-type layers, in addition to difficulties associated with a precise p-n junction placement at the emitter-base heterojunction due to the Mg-memory effect during growth by Metal-Organic Chemical Vapor Deposition. The problem of precise p-n heterojunction placement can be solved by Molecular Beam Epitaxy growth. To investigate this possibility, in this work, we present a comprehensive study of the effect of III/N ratio, growth temperature, and Mg doping on the resistivity of Mg doped GaN layers grown by Molecular Beam Epitaxy. N(2)-rich growth conditions are found to lead to a temperature-independent low hole mobility, as opposed to Ga-rich growth conditions that lead to higher hole mobilities that vary with temperature. In addition, the growth temperature, Ga flux, and Mg flux windows leading to the highest p-type conductivity are identified.
引用
收藏
页码:1074 / 1077
页数:4
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