Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3

被引：94

作者：

Hsu, W. -W.

Chen, J. Y.

Cheng, T. -H.

Lu, S. C.

Ho, W. -S.

Chen, Y. -Y.

Chien, Y. -J. ^{[4
]}

Liu, C. W. ^{[1
,2
,3
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Grad Inst Photon & Optoelect, Dept Elect Engn,Ctr Condensed Matter Sci, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Ctr Emerging Mat & Adv Devices, Taipei 10764, Taiwan

[3] Natl Nano Device Labs, Hsinchu, Taiwan

[4] AU Optron Corp, Adv Technol Dept, TF RD & Syst Dev Div, Taichung, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 02期

关键词：

SOLAR-CELLS; THIN-FILMS; RESOLVED PHOTOLUMINESCENCE; RECOMBINATION; LEVEL;

D O I：

10.1063/1.3675849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With Al2O3 passivation on the surface of Cu(In,Ga)Se-2, the integrated photoluminescence intensity can achieve two orders of magnitude enhancement due to the reduction of surface recombination velocity. The photoluminescence intensity increases with increasing Al2O3 thickness from 5 nm to 50 nm. The capacitance-voltage measurement indicates negative fixed charges in the film. Based on the first principles calculations, the deposition of Al2O3 can only reduce about 35% of interface defect density as compared to the unpassivated Cu(In,Ga)Se-2. Therefore, the passivation effect is mainly caused by field effect where the surface carrier concentration is reduced by Coulomb repulsion. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675849]

引用

页数：3

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