Analytical modeling of metal oxide semiconductor inversion-layer capacitance

被引：3

作者：

Khairurrijal

Miyazaki, S

Takagi, S

Hirose, M

机构：

[1] Japan Sci & Technol Corp, CREST Program, Kawaguchi 3320012, Japan

[2] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan

[3] Toshiba Co Ltd, R&D Ctr, Adv Semicond Device Res Labs, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 1AB期

关键词：

MOSFET; inversion layer; electron confinement; quantum mechanical inversion-layer capacitance;

D O I：

10.1143/JJAP.38.L30

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron wavefunctions confined in a logarithmic potential well formed in the inversion layer of a metal oxide semiconductor field-effect transistor (MOSFET) are given on the basis of generalized Airy functions. The charge centroid of electrons in the inversion layer has been calculated to derive the quantum mechanical inversion-layer capacitance by taking into account higher subband states. It is shown that the present analytical model can quantitatively explain the experimentally observed inversion-layer capacitance.

引用

页码：L30 / L32

页数：3

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