Electrical properties of polycrystalline mercury iodide film

被引：13
|
作者：
Su, Qingfeng [1 ,2 ]
Shi, Weimin [1 ]
Li, Dongmin [3 ]
Wang, Linjun [1 ]
Ding, Weizhong [1 ]
Xia, Yiben [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
[2] Shanghai Lianfu New Energy S&T Co Ltd, Shanghai 201201, Peoples R China
[3] Shanghai Westingarea M&E Syst Co Ltd, Shanghai 200137, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 659卷 / 01期
基金：
中国博士后科学基金; 中国国家自然科学基金;
关键词：
Physical vapor deposition; Irradiation; Electrical properties; Thin films;
D O I：
10.1016/j.nima.2011.08.024
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The outstanding properties of mercury iodide make it an ideal material as room temperature X-ray and gamma-ray detectors. For this purpose, electrical and irradiation properties of high quality polycrystalline HgI2 detector are investigated at room temperature under irradiation conditions by 5.9 keV X-ray irradiation from a Fe-55 source. For (0 0 1)-oriented polycrystalline HgI2 film, the dark current is in the order of 10(-10) A and photocurrent is in the order of 10(-9) A with the applied voltage of 40 V. However, a good signal to noise ratio of 4.44 and an energy resolution of 4.1% for X-ray detecting is also obtained. (C) 2011 Elsevier BM. All rights reserved.
引用
收藏
页码：299 / 301
页数：3
相关论文
共 50 条
  • [31] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
    SETO, JYW
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254
  • [32] Electrical and structural properties of polycrystalline silicon
    Tringe, JW
    Plummer, JD
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) : 7913 - 7926
  • [33] Electrical properties of polycrystalline methane hydrate
    Du Frane, Wyatt L.
    Stern, Laura A.
    Weitemeyer, Karen A.
    Constable, Steven
    Pinkston, John C.
    Roberts, Jeffery J.
    GEOPHYSICAL RESEARCH LETTERS, 2011, 38
  • [34] ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SILICON
    SETO, JYW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C115 - C115
  • [35] Impact of N5+ ion implantation on optical and electrical properties of polycrystalline ZnO film
    Kumar, Ashutosh
    Keshri, Sunita
    Pandey, Beauty
    Krishna, J. B. M.
    Das, Dipankar
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2014, 169 (11): : 965 - 979
  • [36] The effect of Langmuir arachidic acid layers on surface morphology and electrical properties of a polycrystalline CdS film
    Klimova, S. A.
    Stetsyura, S., V
    Venig, S. B.
    Kaya, M.
    Dincer, I
    Elerman, Y.
    Skaptsov, A. A.
    INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2018, 15 (4-5) : 402 - 416
  • [37] STRUCTURE AND PROPERTIES OF POLYCRYSTALLINE CHROMIUM OBTAINED BY IODIDE DEPOSITION.
    Abanin, D.D.
    Evstyukhin, A.I.
    Maslov, V.P.
    Rakitskii, A.N.
    Trefilov, V.I.
    Protection of Metals, 1975, 11 (04): : 458 - 459
  • [38] Copper iodide doping on SnSe polycrystalline with enhanced thermoelectric properties
    Xu, Zhuoming
    Nisar, Mohammad
    Zhang, Junze
    Li, Fu
    Chen, Shuo
    Liang, Guangxing
    Luo, Jingting
    Zheng, Zhuanghao
    Chen, Yue-Xing
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2025, 45 (08)
  • [39] Polycrystalline mercuric iodide films: Deposition, properties, and detector performance
    Roy, UN
    Cui, Y
    Wright, G
    Barnett, C
    Burger, A
    Franks, LA
    Bell, ZW
    2001 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORDS, VOLS 1-4, 2002, : 2310 - 2312
  • [40] Properties of ohmic contact of Au electrode on polycrystalline mercuric iodide
    Liao, Yang
    Shi, Weimin
    Yang, Weiguang
    Li, Jirong
    Qian, Jun
    Lu, Shuyi
    MATERIAL DESIGN, PROCESSING AND APPLICATIONS, PARTS 1-4, 2013, 690-693 : 1672 - 1675
12345