Self-Aligned Coupled Nanowire Transistor

被引:12
|
作者
Kulmala, Tero S. [1 ]
Colli, Alan [2 ]
Fasoli, Andrea [1 ]
Lombardo, Antonio [1 ]
Haque, Samiul [2 ]
Ferrari, Andrea C. [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England
[2] Nokia Res Ctr, Cambridge, England
关键词
nanowire; field-effect transistor; self-assembly; thyristor; FIELD-EFFECT TRANSISTORS; GRAPHENE NANORIBBONS; SILICON NANOWIRES; FABRICATION; GATE; LITHOGRAPHY; NANOSYSTEMS; CIRCUITS; MASK;
D O I
10.1021/nn201203s
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The integration of multiple functionalities into individual nanoelectronic components is increasingly explored as a means to step up computational power, or for advanced signal processing. Here, we report the fabrication of a :coupled nanowire transistor, a device where two superimposed high-performance nanowire field-effect transistors capable of mutual interaction form a thyristor-like circuit. The structure embeds an internal level of signal processing, showing promise for applications in analogue computation. The device is naturally derived from a single NW via a self-aligned fabrication process.
引用
收藏
页码:6910 / 6915
页数:6
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