Transverse hot-electron effects in semiconductors

被引：2

作者：

Kachlishvili, ZS ^{[1
]}

Chumburidze, FG ^{[1
]}

机构：

[1] Tbilisi State Univ, Tbilisi, Georgia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 06期

关键词：

Physical Condition; Charge Carrier; Individual Effect; Specific Experiment; Electrical Breakdown;

D O I：

10.1134/1.1262150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The physical conditions for observation of transverse breakdown, electrical breakdown, and transverse runaway of hot charge carriers are investigated. Since the macroscopic manifestations of these effects are the same-a sharp growth of the current-voltage characteristic-the interpretation of the results of a specific experiment is extremely difficult. Some quantitative criteria for observation of these individual effects are presented. (C) 1998 American Institute of Physics. [S1063-7850(98)02306-4].

引用

页码：470 / 471

页数：2

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