Transverse hot-electron effects in semiconductors

被引：2
|
作者：
Kachlishvili, ZS [1 ]
Chumburidze, FG [1 ]
机构：
[1] Tbilisi State Univ, Tbilisi, Georgia
来源：
TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 06期
关键词：
Physical Condition; Charge Carrier; Individual Effect; Specific Experiment; Electrical Breakdown;
D O I：
10.1134/1.1262150
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The physical conditions for observation of transverse breakdown, electrical breakdown, and transverse runaway of hot charge carriers are investigated. Since the macroscopic manifestations of these effects are the same-a sharp growth of the current-voltage characteristic-the interpretation of the results of a specific experiment is extremely difficult. Some quantitative criteria for observation of these individual effects are presented. (C) 1998 American Institute of Physics. [S1063-7850(98)02306-4].
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页码：470 / 471
页数：2
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