Characterization of N-polar AlN in GaN/AlN/(Al, Ga) N heterostructures grown by metal-organic chemical vapor deposition

被引：6
|
作者：
Li, Haoran [1 ,2 ]
Mazumder, Baishakhi [3 ]
Bonef, Bastien [1 ,2 ]
Keller, Stacia [1 ,2 ]
Wienecke, Steven [1 ,2 ]
Speck, James S. [1 ,2 ]
Denbaars, Steven P. [1 ,2 ]
Mishra, Umesh K. [1 ,2 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 11期
关键词：
metal-organic chemical vapor deposition; AlN; GaN; AlGaN; N polar; N face; atom probe tomography; ATOM-PROBE TOMOGRAPHY; UNINTENTIONAL INCORPORATION; EPITAXIAL-GROWTH; GALLIUM; ORIGINS; LAYERS;
D O I：
10.1088/1361-6641/aa8b30
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In GaN/(Al, Ga) N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (AlxGa1-xN) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/S. I. GaN HEMT structure possessed a similarly high x content.
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页数：5
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