Optimization of GaN nucleation layer deposition conditions on sapphire substrates in HVPE system

被引：6
|
作者：
Prazmowska, J. [1 ]
Korbutowlez, R. [1 ]
Paszkiewicz, R. [1 ]
Szyszka, A. [1 ]
Serafinczuk, J. [1 ]
Podhorodecki, A. [2 ]
Misiewicz, J. [2 ]
Tlaczala, M. [1 ]
机构：
[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
来源：
VACUUM | 2008年 / 82卷 / 10期
关键词：
HVPE; nucleation layer; thick GaN layer; GaN; LT GaN;
D O I：
10.1016/j.vacuum.2008.01.037
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of deposition conditions of nucleation GaN layer on the properties of high-temperature GaN layer, grown on sapphire substrates, was investigated. The hydride vapor phase epitaxy (HVPE) three-section horizontal hot-wall furnace technique was applied. Various temperatures, HCl flows and time intervals of nucleation layer growth were utilized. Based on previous studies the following experimental conditions were selected: temperature was kept at 450 or 570 degrees C, and HCl flows were 8 or 10 sccm/min. The duration of nucleation layer deposition was 5, 7 and 9 min. The scanning electron microscopy technique was applied for the investigation of nucleation layer morphology after migration. Thick GaN layers were deposited during the three-step growth process at 1060 degrees C. Samples with various surface morphologies were obtained. Photoluminescence spectra and X-ray measurements were performed, which permitted clarifications of the influence of growth conditions of the nucleation layer on the properties of high-temperature layers. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：988 / 993
页数：6
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