A fully integrated 0.18-μm CMOS direct conversion receiver front-end with on-chip LO for UMTS

被引：38

作者：

Gatta, F ^{[1
]}

Manstretta, D

Rossi, P

Svelto, F

机构：

[1] Broadcom Corp, Irvine, CA 92618 USA

[2] Univ Pavia, Dept Elect, I-27100 Pavia, Italy

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 01期

关键词：

direct conversion; injection locking; low-noise amplifier (LNA); mixer; offset cancellation; RF CMOS; RF receiver; Universal Mobile Telecommunication System (UMTS); variable gain amplifier (VGA); voltage-controlled oscillator (VCO);

D O I：

10.1109/JSSC.2003.820865

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a,0.18-mum CMOS direct-conversion IC realized for the Universal Mobile Telecommunication System (UNITS). The chip comprises a variable gain low-noise amplifier, quadrature mixers, variable gain amplifiers, And local oscillator generation circuits. The solution is based on very high dynamic range front-end blocks, a low-power superharmonic injection-locking technique for quadrature generation and continuous-time dc offset removal. Measured performances are an overall gain variable between 21 and 47 dB, 5.6 dB noise figure, -2 dBm out-of-band II3, -10 dBm in-band IIP3, 44.8-dBm minimum IIP2, and -155-dBc/Hz phase noise at 135 MHz from carrier frequency, while drawing 21 mA from a. 1.8-V supply.

引用

页码：15 / 23

页数：9

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