Robust ESD protection for high brightness GaN LEDs using new TVS Zener diodes

被引：3
|
作者：
Choi, S. S. [1 ]
Cho, D. H. [2 ]
Choi, C. J. [1 ]
Kim, J. Y. [1 ]
Yang, J. W. [1 ]
Shim, K. H. [1 ,2 ]
机构：
[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Deokjinku 561756, Jeonju, South Korea
[2] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Sigetronics Inc, R&D Div, Deokjinku 561756, Jeonju, South Korea
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 05期
关键词：
TRANSIENT VOLTAGE SUPPRESSOR; JUNCTIONS;
D O I：
10.1088/0268-1242/26/5/055009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrostatic discharge (ESD) stability of GaN-based LEDs, which are assembled with new transient voltage suppression (TVS) Zener diodes, has been characterized in experiments on reverse leakage current and functionality. Advantageous features of TVS Zener diodes with extremely low differential resistance and low leakage current have enhanced their ESD protection capability, especially at high temperature. The TVS Zener presented an excellent performance in protecting GaN-based LEDs from ESD stress exceeding the human body model +/- 8 kV at 110 degrees C. The ESD robustness of the high-temperature stability is analyzed in order to provide proper reliability under hostile environment of massive heat and light delivered from LEDs.
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页数：5
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