Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasma

被引：15
|
作者：
Min, Su Ryun [1 ]
Cho, Han Na [1 ]
Li, Yue Long [1 ]
Chung, Chee Won [1 ]
机构：
[1] Inha Univ, Dept Chem Engn, Inchon 402751, South Korea
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 11期
关键词：
zinc oxide; high density plasma; dry etching; HBr;
D O I：
10.1016/j.tsf.2007.08.023
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The etching characteristics of ZnO thin films were examined in an HBr/Ar gas mix using an inductively coupled plasma reactive ion etching system. The etch rate and etch profile were systematically investigated as a function of gas concentration. In addition, the effects of etch parameters such as coil rf power, dc-bias voltage, and gas pressure were studied. As the HBr concentration increased, the etch rate of the ZnO films gradually decreased while the etch profile was improved. Surface analyses including X-ray photoelectron spectroscopy and atomic force microscopy were employed to elucidate the etch mechanism of ZnO in an HBr/Ar chemistry. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：3521 / 3529
页数：9
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