Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films Using Cl2/Ar Gas Mix

Inductively coupled plasma reactive ion etching of gallium indium zinc oxide (GIZO) thin films patterned with a photoresist was studied using a Cl-2/Ar gas As the Cl-2 concentration was increased from pure Ar to 40% Cl-2 concentration, the etch rate of GIZO films increased, and thereafter gradually decreased The etch rate increased with increasing coil rf power and dc bias voltage A high degree of anisotropy was achieved with increasing coil rf power and dc-bias voltage, and decreasing gas pressure X-ray photoelectron spectroscopy of the etched films revealed that chemical compounds were formed during the etching process, indicating that the etching of GIZO films is governed by a reactive ion etching mechanism (C) 2010 The Japan Society of Applied Physics