p-GaN/i-InxGa1x N/n-GaN solar cell with indium compositional grading

被引：1

作者：

Mahala, Pramila ^{[1
]}

Behura, Sanjay Kumar ^{[2
]}

Ray, Abhijit ^{[1
]}

Dhanavantri, Chenna ^{[3
]}

Jani, Omkar ^{[2
]}

机构：

[1] Pandit Deendayal Petr Univ, Sch Solar Energy, Gandhinagar 382007, Gujarat, India

[2] Innovat & Incubat Ctr, Gujarat Energy Res & Management Inst Res, Solar Energy Res Wing, Gandhinagar 382007, Gujarat, India

[3] CSIR Cent Elect Engn Res Inst, Pilani 333031, Rajasthan, India

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 05期

关键词：

InxGa1-xN; GaN; Solar cell; Grading; POLARIZATION; EFFICIENCY; INGAN;

D O I：

10.1007/s11082-014-9968-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of indium compositional grading on the performance of solar cell has been investigated using TCAD Silvaco. An enhancement in efficiency of almost two times is found and this may be due to the increase in short circuit current density and open circuit voltage. This can be imputed to high carrier collection due to the reduction of band offset at the interface and high band bending in intrinsic layer. The optimized solar cell with indium composition grading from 0 to 0.11, results fill factor of 77 %, short circuit current density of 0.99 mA/cm and open circuit voltage of 2.21 V under AM1.5G illumination.

引用

页码：1117 / 1126

页数：10

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