p-GaN/i-InxGa1x N/n-GaN solar cell with indium compositional grading

被引：1

作者：

Mahala, Pramila ^{[1
]}

Behura, Sanjay Kumar ^{[2
]}

Ray, Abhijit ^{[1
]}

Dhanavantri, Chenna ^{[3
]}

Jani, Omkar ^{[2
]}

机构：

[1] Pandit Deendayal Petr Univ, Sch Solar Energy, Gandhinagar 382007, Gujarat, India

[2] Innovat & Incubat Ctr, Gujarat Energy Res & Management Inst Res, Solar Energy Res Wing, Gandhinagar 382007, Gujarat, India

[3] CSIR Cent Elect Engn Res Inst, Pilani 333031, Rajasthan, India

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 05期

关键词：

InxGa1-xN; GaN; Solar cell; Grading; POLARIZATION; EFFICIENCY; INGAN;

D O I：

10.1007/s11082-014-9968-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of indium compositional grading on the performance of solar cell has been investigated using TCAD Silvaco. An enhancement in efficiency of almost two times is found and this may be due to the increase in short circuit current density and open circuit voltage. This can be imputed to high carrier collection due to the reduction of band offset at the interface and high band bending in intrinsic layer. The optimized solar cell with indium composition grading from 0 to 0.11, results fill factor of 77 %, short circuit current density of 0.99 mA/cm and open circuit voltage of 2.21 V under AM1.5G illumination.

引用

页码：1117 / 1126

页数：10

共 50 条

[31] n+-GaN formed by Si implantation into p-GaN
Sheu, JK
Tun, CJ
Tsai, MS
Lee, CC
Chi, GC
Chang, SJ
Su, YK
JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 1845 - 1848
[32] Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer
Jiang, H., 1600, Japan Society of Applied Physics (43):
[33] Barrier-height-enhanced n-GaN Schottky photodiodes using a thin p-GaN surface layer
Jiang, H
Egawa, T
Ishikawa, H
Dou, YB
Shao, CL
Jimbo, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (7A): : 4101 - 4104
[34] Influence of Polarization on the Efficiency of InxGa1-xN/GaN p-i-n Solar Cells
Jeng, Ming-Jer
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (12)
[35] Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels
Huan Li
Zhiyuan Bai
Lian Yang
Journal of Electronic Materials, 2024, 53 : 2562 - 2572
[36] Characterization of p-GaN1-xAsx/n-GaN PN junction diodes
Qian, H.
Lee, K. B.
Vajargah, S. Hosseini
Novikov, S. V.
Guiney, I.
Zhang, S.
Zaidi, Z. H.
Jiang, S.
Wallis, D. J.
Foxon, C. T.
Humphreys, C. J.
Houston, P. A.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (06)
[37] Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels
Li, Huan
Bai, Zhiyuan
Yang, Lian
JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (05) : 2562 - 2572
[38] Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films
钟傲雪
王磊
唐蕴
杨永涛
王进进
朱慧平
吴真平
唐为华
李博
Chinese Physics B, 2023, (07) : 513 - 517
[39] Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films
Zhong, Aoxue
Wang, Lei
Tang, Yun
Yang, Yongtao
Wang, Jinjin
Zhu, Huiping
Wu, Zhenping
Tang, Weihua
Li, Bo
CHINESE PHYSICS B, 2023, 32 (07)
[40] MATLAB/Simulink Based Modeling of n-GaN/p-In0.25Ga0.75N Solar Cell
Belghouthi, Rabeb
Selmi, Tarek
2017 INTERNATIONAL CONFERENCE ON GREEN ENERGY & CONVERSION SYSTEMS (GECS), 2017,

← 1 2 3 4 5 →