Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction

被引：25

作者：

Ma, N. ^{[1
]}

Wang, X. Q. ^{[1
]}

Xu, F. J. ^{[1
]}

Tang, N. ^{[1
]}

Shen, B. ^{[1
]}

Ishitani, Y. ^{[2
]}

Yoshikawa, A. ^{[2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Chiba Univ, Dept Elect & Elect Engn, Inage Ku, Chiba 2638522, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期

基金：

中国国家自然科学基金;

关键词：

LAYERS;

D O I：

10.1063/1.3522892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The p-type conduction in Mg-doped InN film is identified by an anomalous Hall mobility kink observed at similar to 600 K in temperature-dependent Hall-effect measurements. The good agreement between experimental results and ensemble Monte Carlo simulation confirms the p-type bulk conduction under the surface electron accumulation layer. Furthermore, it is found that there is an exponential relationship between the hole concentration in the p-type bulk layer and the reciprocal kink temperature, which provides an effective way to evaluate the hole concentration in Mg-doped InN bulk layer through Hall-effect measurements. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522892]

引用

页数：3

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