Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

被引：23

作者：

Guo, L. ^{[1
]}

Wang, X. Q. ^{[1
,2
]}

Zheng, X. T. ^{[1
]}

Yang, X. L. ^{[1
]}

Xu, F. J. ^{[1
]}

Tang, N. ^{[1
]}

Lu, L. W. ^{[1
]}

Ge, W. K. ^{[1
]}

Shen, B. ^{[1
,2
]}

Dmowski, L. H. ^{[3
]}

Suski, T. ^{[3
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China

[3] Polish Acad Sci, Inst High Pressure Phys Unipress, PL-01142 Warsaw, Poland

来源：

SCIENTIFIC REPORTS | 2014年 / 4卷

关键词：

GROWTH;

D O I：

10.1038/srep04371

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN: Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness, and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.

引用

页数：5

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